solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com designer?s data sheet to - 254, to254z note 1: maximum current limited by package config uration to - 254 (sff85n10m) to - 254z (sff85n10z) sf f 80 n 1 0 m sff80 n10 z 5 5 amp (note 1) / 10 0 volts 12 mo n - channel trench gate mosfet features: trench gate technology for high cell density lowest on - resistance in the industry enhanced operating temperature range hermetically sealed, isolated power package low total gate charge fast switching enhanced r eplacement for irm 1 5 0 tx, txv, s - level screening available improved (r ds(on) q g ) figure of merit maximum ratings symbol value units drain - source voltage v dss 10 0 v gate ? source voltage v gs 20 v max. continuous drain current ( package limite d) @ t c = 25oc @ t c = 125oc i d 1 i d 2 55 (note 1) 5 5 (note 1) a max. instantaneous drain current (tj limited) @ t c = 25oc @ t c = 125oc i d 3 i d 4 110 70 a max. avalanche current @ l= 0.1 mh i ar 7 5 a repetitive avalanche energy @ l= 0.1 mh e ar 280 mj total p ower dissipation @ t c = 25oc p d 2 5 0 w operating & storage temperature t op & t stg - 55 to +200 oc maximum thermal resistance junction to case r 0 jc 0 .7 (typ 0.55) oc/w note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: ft0019a doc to - pin 1 pin 3 pin 2 pin 3 pin 2 pin 1 to - 254
solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com sff80 n10m sff80 n10z electrical characteristics 4 / symbol min typ max units drain to source breakdown voltage v gs = 0 v , i d = 250a bv dss 10 0 ?? ?? v drain to source on state resistance v gs = 1 0 v , i d = 30a, tj = 25 o c v gs = 1 0 v , i d = 30a, tj = 1 25 o c v gs = 1 0 v , i d = 30a, tj = 2 00 o c v gs = 1 0 v , i d = 85a, tj = 25 o c r ds(on) ?? ?? ?? ?? 9 .5 16 22 10 12. 0 ?? ?? ?? mo gate threshold volt age v ds = v g s , i d = 250a v gs(th) 2 .0 ?? 4 .0 v gate to source leakage v gs = 20v i gss ?? ?? 100 na zero gate voltage drain current v ds = 80v , v gs = 0v, t j = 25 o c v ds = 80v , v gs = 0v, t j = 1 25 o c v ds = 80v , v gs = 0v, t j = 2 00 o c i dss ?? ?? ?? ?? 1 50 1 0 a a ma forward transconductance v ds = 15v , i d = 30a, t j = 25 o c g fs 2 3 ?? ?? mho total gate charge gate to source charge gate to drain charge v gs = 1 0v v d s = 5 0v i d = 8 5 a q g q gs q gd ?? ?? ?? 140 40 40 2 2 0 ?? ?? nc turn on delay time rise tim e turn off delay time fall time v gs = 1 0v v d s = 5 0v i d = 8 5 a r g = 2.5 o t d ( on ) t r t d ( off ) t f ?? ?? ?? ?? 2 5 11 5 7 5 1 1 0 3 5 1 8 5 1 1 0 1 6 0 nsec diode forward voltage i f = 50 a, v gs = 0 v v sd ?? 1.0 1. 5 v diode reverse recovery time peak reverse recovery cu rrent reverse recovery charge i f = 50 a, di/dt = 100a/usec t rr i rm(rec) q rr ?? 7 0 5.5 0.2 1 5 0 10 0.35 nsec a c input capacitance output capacitance reverse transfer capacitance v gs = 0v v d s = 2 5 v f = 1 mhz c iss c oss c rss ?? ?? ?? 8700 750 450 ?? ?? ?? pf notes: * pulse test: pulse width = 300sec, duty cycle = 2% . 1 / for ordering information, price, and availability contact factory. 2 / screening per mil - prf - 19500 . 3 / for package outlines contact factory. 4 / unless otherwise specified, all electrical characteristics @25 o c. available part numbers: consult factory pin assignment (standard) package drain source gate to254 pin 1 pin 2 pin 3 to254z pin 1 pin 2 pin 3 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: ft00 19a doc
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